CHARACTERISTICS
| Weight | 35kg |
| Dimensions | 460mm (L)×505mm (W)×205mm (H) |
| Interfaces | Ethernet Port×1 DB9×1 Power Cord Interface×1 Foot Switch×1 Air Source Port×1 Switch Button×1 |
| Square Sample: 125mm×125mm, 156mm×156mm Circular Sample: 4”, 5”, 6”, 8”, 12” | |
| Silicon Wafer Requirements | Silicon Wafer Thickness Range: 50μm～1000μm |
| Silicon Wafer Resistivity Range: 0.1Q*cm～20Q*cm (resistivity range can be customized) (Thickness approximately 180μm) |
| Data Indicators | |
| Single-point and multi-point thickness | Error: ≤±3.00μm |
| Repeatability: ≤±0.5% | |
| Resistivity | Error: ≤±3% |
| Repeatability: ≤0.5% | |
| Environmental Requirements | |
| Temperature | 22℃~25℃ |
| Humidity | 35%~60% |
DESCRIPTION
- Desktop-type manual resistance PN thickness measurement equipment. It utilizes eddy current, surface photovoltage, and capacitance methods to test resistivity, PN, and thickness, primarily for semiconductor and other material measurements. Equipped with various testing platforms according to different needs for customer selection.
- Applications: Semiconductor materials, solar cell materials (silicon, polycrystalline silicon, silicon carbide, etc.), new materials, functional materials, conductive films (metals, ions, etc.), diffusion layers, silicon-related epitaxial materials.
